• Part: 2SB1017
  • Description: SILICON PNP TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 85.91 KB
Download 2SB1017 Datasheet PDF
2SB1017 page 2
Page 2

Datasheet Summary

: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm Features . Good Linearity of hpE . plementary to 2SD1408 . Remended for 20 ~ 25W High-Fiderity iudio Frequency Amplifier Output Stage. 10.3 MAX. 7.(D 03.2±<XZ /-1 ^-i3J~~ s: CO ~£ - cs - H <o IS i 1 + 0.25 1 r 0.76-0.15 1 " is H 5 Til ^ MAXIMUM RATINGS (Ta=25°C) 2.54±0.25_ 2.54±0.25 - CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC T...