2SB1018 Description
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS.
2SB1018 Key Features
- 55^150 °C
- EIAJ TOSHIBA
2SB1018 Datasheet
| Part number | 2SB1018 |
|---|---|
| Download | 2SB1018 Datasheet (PDF) |
| File Size | 118.81 KB |
| Manufacturer | Toshiba |
| Description | SILICON PNP TRANSISTOR |
|
|