Datasheet Summary
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
Features
. High Collector Current : Ic=-7A . Low Collector Saturation Voltage
: V CE ( sat )=-0.5V(Max.) at I C=-4A . plementary to 2SD1411
MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VcBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current ic
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Tj
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING UNIT
-100
-80 V
-5 V
-7...
