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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation Voltage
: V CE ( sat )=-0.5V(Max.) at I C=-4A . Complementary to 2SD1411
MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VcBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
IB
Collector Power Dissipation
Ta=25°C Tc=25°C
PC
Junction Temperature
Tj
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING UNIT
-100
V
-80 V
-5 V
-7 A
-1 A
2.0
W
30
150 °C
-55^150 °C
10.3MAX.
11*
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id
:
1.2
H1.4
+ Q25 \
0.76-0.15 1 ii
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M55 S
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2.54x0.
2SB1018 Datasheet
