2SB1018 Datasheet and Specifications PDF

The 2SB1018 is a PNP Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
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Part Number2SB1018 Datasheet
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411 ·Minimum Lot-to-Lot variations for robust device performance and reliabl. akdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V.
Part Number2SB1018 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.. voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30.
Part Number2SB1018 Datasheet
DescriptionSILICON PNP TRANSISTOR
ManufacturerToshiba
Overview : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation . . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) at I C=-4A . Complementary to 2SD1411 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic .

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