Datasheet Details
| Part number | 2SB855 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.80 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB855 Download (PDF) |
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| Part number | 2SB855 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.80 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB855 Download (PDF) |
|
|
|
·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 20 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ;
isc Silicon PNP Power Transistor 2SB855.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB855 | SILICON POWER TRANSISTOR | SavantIC |
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