2SB855 transistor equivalent, silicon pnp power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector Current: IC= -2A
*Low Collector Saturation Voltage
: VCE(sat)= -1.2V(Max)@IC= -2A
*High Collector Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desi.
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