Datasheet Details
| Part number | 2SB857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.56 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB857 Download (PDF) |
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| Part number | 2SB857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.56 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB857 Download (PDF) |
|
|
|
·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB857 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
isc Silicon PNP Power Transistor 2SB857.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB857 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB857 | SILICON PNP TRANSISTOR | UTC |
 |
2SB857 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB857 | Silicon PNP Transistor | Renesas |
 |
2SB857 | PNP Transistor | Dc Components |
| Part Number | Description |
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