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2SB857 - PNP Transistor

General Description

Designed for low frequency power amplifier.

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Datasheet Details

Part number 2SB857
Manufacturer Dc Components
File Size 211.66 KB
Description PNP Transistor
Datasheet download datasheet 2SB857 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DC COMPONENTS CO., LTD. R 2SB857 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating -70 -50 -5 -4 -8 40 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 1 2 3 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.