2SB856 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V 35 35 35...