Datasheet Details
| Part number | 2SB858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.40 KB |
| Description | PNP Transistor |
| Datasheet | 2SB858-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB858.
| Part number | 2SB858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.40 KB |
| Description | PNP Transistor |
| Datasheet | 2SB858-INCHANGE.pdf |
|
|
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·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1134 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB858 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB858 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB858 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB858 | Silicon PNP Transistor | Renesas |
| Part Number | Description |
|---|---|
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| 2SB813 | PNP Transistor |
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| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |