Datasheet Details
| Part number | 2SB850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | PNP Transistor |
| Datasheet | 2SB850-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | PNP Transistor |
| Datasheet | 2SB850-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A ·Wide Area of Safe Operation ·Complement to Type 2SD1117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.5 ℃/W 2SB850 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB850 | GENERAL PURPOSE POWER AMPLIFIER | New Jersey Semi-Conductor |
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