2SB856 datasheet by Inchange Semiconductor.
| Part number | 2SB856 |
|---|---|
| Datasheet | 2SB856_InchangeSemiconductor.pdf |
| File Size | 217.04 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
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IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB856 | Silicon PNP Transistor | Hitachi Semiconductor |
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2SB856 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SB834 | Silicon PNP Power Transistors |
| 2SB874 | Silicon PNP Power Transistor |
| 2SB881 | Silicon PNP Power Transistor |
| 2SB882 | Silicon PNP Power Transistor |
| 2SB883 | Silicon PNP Power Transistor |
