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2SB856 Datasheet

The 2SB856 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB856
ManufacturerHitachi Semiconductor
Overview . .
Part Number2SB856
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable. ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gai.
Part Number2SB856
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ra. urrent gain Transition frequency CONDITIONS IC=-50mA; RBE=6 IC=-5mA; IE=0 IE=-5mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-20V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 35 MIN -50 -50 -4 TYP. 2SB856 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT MAX.