Datasheet Details
| Part number | 2SB859 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.71 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB859 Download (PDF) |
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| Part number | 2SB859 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.71 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB859 Download (PDF) |
|
|
|
·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1135 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ;
isc Silicon PNP Power Transistor 2SB859.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB859 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB859 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB817 | Silicon PNP Power Transistor |
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| 2SB834 | Silicon PNP Power Transistors |
| 2SB874 | Silicon PNP Power Transistor |
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| 2SB882 | Silicon PNP Power Transistor |
| 2SB883 | Silicon PNP Power Transistor |