2SB859 Datasheet

The 2SB859 is a Silicon PNP Transistor.

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Part Number2SB859
ManufacturerHitachi Semiconductor
Overview 2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Rati. se breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 35
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* V V MHz pF Notes: 1. The 2SB859 is grouped by hFE.
Part Number2SB859
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Complement to type 2SD1135 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(. DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; RBE=8 IE=-10µA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-5V VCB=-80V; IE=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V IC=0; VCB=-20V;f=1MHz IC=-0.5A ; VCE=-5V 60 35 75 20 pF MHz MIN -80 -5 -2.0 -1.5 -0.1 200 TYP. MAX UNIT V.
Part Number2SB859
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1135 ·Minimum Lot-to-Lot variations for robust dev. BE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gai.