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2SB944 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 35 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;

Overview

isc Silicon PNP Power Transistor 2SB944.