Datasheet Details
| Part number | 2SB975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.47 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet |
 2SB975_InchangeSemiconductor.pdf
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The 2SB975 is Silicon PNP Darlington Power Transistor designed by Inchange Semiconductor.
| Part number | 2SB975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.47 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet |
2SB975_InchangeSemiconductor.pdf
|
|
|
|
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD1309 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low-speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100
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