2SB975 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1. Complement.

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Datasheet Specifications

Part number: 2SB975
Manufacturer: Inchange Semiconductor
File Size: 190.47 KB
Datasheet: 2SB975_InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Conti

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2SB975 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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