SavantIC 2SB975
SILICON POWER TRANSISTOR
DESCRIPTION
●With ITO-220 package●DARLINGTON
●High DC current gain
●Low collector saturation voltage
APPLICATIONS
●Low frequency power amplification●Low speed power switching applications PINNING PIN 1 2 3 Base Collector Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -8 40 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain C...