Inchange Semiconductor 2SB975
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB975 |
|---|---|
| Datasheet | 2SB975 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 2000(Min)@ IC= -3A●Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A
●Complement to Type 2SD1309
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency power amplifier and low-speed switching industrial use.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-DC Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -0.8 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-E...
