Datasheet Details
| Part number | 2SC1870 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.27 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 2SC1870 Datasheet
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| Part number | 2SC1870 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.27 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
2SC1870 Datasheet
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·With TO-3 package ·High switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W 2SC1870 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;
IE=0 V(BR)EBO Emitter-base breakdown voltag IE=1mA ;
IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC1870 | SILICON POWER TRANSISTOR | SavantIC |
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