With TO-3 package
High switching speed APPLICATIONS
For power switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
MAXIMUN RATINGS
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Col
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Product Specification
Silicon NPN Power Transistors
2SC1870
DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
MAXIMUN RATINGS
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb*25 Open emitter Open base Open collector CONDITIONS VALUE 300 250 7 10 3 100 150 -65~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W
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