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2SC1870 - Silicon NPN Power Transistors

General Description

With TO-3 package High switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collec

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·High switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W 2SC1870 isc website：www.iscsemi.