Datasheet Details
| Part number | 2SC2233 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2233_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2233 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2233_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2233 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
IB=0.4A ICBO Collector Cutoff Current VCB= 170V ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2233 | SILICON NPN TRANSISTOR | Toshiba |
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