2SC2233 - SILICON NPN TRANSISTOR

Toshiba

Key Features

. Large Collector Current Capability. . Large Collector Power Dissipation Capability. Unit in mm ^10.3MAX. .03.63:0:2.

2SC2233 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2233
Manufacturer	Toshiba
File Size	128.02 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC2233 Datasheet

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Other Datasheets by Toshiba

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2SC2230A	Silicon NPN Triple Diffused Type Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC2233 TV HOR I ZONTAL DEFLECT I ON OUTPUT APPL I CAT I ONS. FEATURES: . Large Collector Current Capability. . Large Collector Power Dissipation Capability. Unit in mm ^10.3MAX. .03.63:0:2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic ICP Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature T-i Storage Temperature Range stg RATING 200 60 UNIT 10 1.5 40 150 -55-150 W "°C °c 1.5MAX. Q76 2.5 4 2.5 4 in o 1 23 .