2SC2233 Overview
·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V.
| Part number | 2SC2233 |
|---|---|
| Datasheet | 2SC2233_InchangeSemiconductor.pdf |
| File Size | 191.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC2233 | SILICON NPN TRANSISTOR | Toshiba |
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| 2sc2433 | Silicon NPN Power Transistor |