2SC2233 Description
·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V.
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2233 | SILICON NPN TRANSISTOR |
·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V.