Datasheet Details
| Part number | 2SC2553 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.71 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 2SC2553 Datasheet
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| Part number | 2SC2553 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.71 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
2SC2553 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 w 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2553 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2553 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2553 | Silicon NPN Transistor | Toshiba |
 |
2SC2553 | SILICON POWER TRANSISTOR | SavantIC |
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