2SC3130 - Silicon NPN RF Transistor

Description

High Current-Gain Bandwidth Product Small Output Capacitance APPLICATIONS

applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SC3130
Manufacturer	Inchange Semiconductor
File Size	137.35 KB
Description	Silicon NPN RF Transistor
Datasheet	2SC3130 Datasheet
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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 15 V 10 V 3V 50 mA 0.15 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.

Published: Jun 23, 2016 |