2SC3130 Datasheet and Specifications PDF

The 2SC3130 is a Silicon NPN Transistor.

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Part Number2SC3130 Datasheet
ManufacturerPanasonic
Overview Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base,.
* High transition frequency fT
* Small collector output capacitance (Common base, input open cir- 0.40+
*00..0150 3 0.16+
*00..0160 0.4±0.2 1.50
*+00..0255 2.8
*+00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb
* Mini type package, allowing downsizing of the equipment and au.
Part Number2SC3130 Datasheet
DescriptionNPN Transistors
ManufacturerKexin Semiconductor
Overview SMD Type Transistors NPN Transistors 2SC3130 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=10V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1.
* Collector Current Capability IC=50mA
* Collector Emitter Voltage VCEO=10V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1
* Absolute Maximum Rat.
Part Number2SC3130 Datasheet
DescriptionSilicon NPN RF Transistor
ManufacturerInchange Semiconductor
Overview ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA. age IC= 20mA ; IB= 4mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 10 V 0.5 V 1 μA hFE DC Current Gain IC= 5mA ; VCE= 4V 75 400 fT Current-Gain
*Bandwidth Product IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz COB Output Capacitance IE= 0 ; VCB= 4V; f= 1MHz 1.4 pF rbb’
* CC Base Time Co.