| Part number | 2SC3130 |
|---|---|
| Datasheet | 2SC3130-InchangeSemiconductor.pdf |
| File Size | 137.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
|
|
·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3130 | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SC3130 | NPN Transistors | Kexin |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3198 | Silicon NPN Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3230 | Silicon NPN Power Transistors |
