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2SC3135 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High VEBO.
  • Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteris.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.