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Transistors
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT • Small collector output capacitance (Common base, input open cir-
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
cuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
5˚
(0.65)
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
0 to 0.1 1.1–+00..12 1.1–+00..