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2SC3582 - Silicon NPN RF Transistor

Description

Achieve a Very Wide Dynamic Range and Excellent Linearity.

NF = 1.2 dB TYP.

@f = 1.0 GHz Ga = 12 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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Datasheet Details

Part number 2SC3582
Manufacturer Inchange Semiconductor
File Size 184.36 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC3582 Datasheet
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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.
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