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2SC3583 - Silicon NPN RF Transistor

Description

NF = 1.2 dB TYP., Ga = 11 dB TYP.

High Power Gain MAG = 15dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise

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Datasheet Details

Part number 2SC3583
Manufacturer Inchange Semiconductor
File Size 406.82 KB
Description Silicon NPN RF Transistor
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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 200 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3583 isc website：www.iscsemi.
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