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isc Silicon NPN RF Transistor
DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed forVHF, UHF and CATV high frequency
wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
1.
2SC3585 Datasheet
