2SC3637

The 2SC3637 is Silicon NPN Power Transistors designed by Inchange Semiconductor.

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SC3637
Manufacturer	Inchange Semiconductor
File Size	198.08 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC3637_InchangeSemiconductor.pdf
Additional preview pages of the 2SC3637 datasheet.

Product details

Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7

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Published: Oct 25, 2013 |