2SC3658 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3658 .
High Breakdown Voltage- : VCES= 1500V (Min). Built-in Damper Didoe. 100% avalanche tested. Minimum Lot-to-Lot variations for robust d.

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Datasheet Specifications

Part number: 2SC3658
Manufacturer: Inchange Semiconductor
File Size: 178.14 KB
Datasheet: 2SC3658_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W

2SC3658 Distributors

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2SC3658 Silicon NPN Power Transistors Inchange Semiconductor

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