2SC3658 transistors equivalent, silicon npn power transistors.
*Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*High Breakdown Voltage-
: VCES= 1500V (Min)
*Built-in Damper Didoe
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage, high power sw.
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