Datasheet Details
| Part number | 2SC3658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.14 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3658 Download (PDF) |
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| Part number | 2SC3658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.14 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3658 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Didoe ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3658 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3658.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3658 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC3627 | Silicon NPN Power Transistors |
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| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3678 | Silicon NPN Power Transistors |