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2SC3685 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition color display horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 125 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3685 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;

IB = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

Overview

isc Silicon NPN Power Transistor.