Datasheet Details
| Part number | 2SC3799 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.61 KB |
| Description | Power Transistor |
| Download | 2SC3799 Download (PDF) |
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| Part number | 2SC3799 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.61 KB |
| Description | Power Transistor |
| Download | 2SC3799 Download (PDF) |
|
|
|
·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3799 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
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|---|---|
| 2SC3790 | Silicon NPN Transistor |
| 2SC3793 | Silicon NPN Transistor |
| 2SC3796 | Power Transistor |
| 2SC3797 | Power Transistor |
| 2SC3798 | Power Transistor |
| 2SC3709 | Silicon NPN Power Transistor |
| 2SC3710A | Silicon NPN Power Transistor |
| 2SC3714 | Silicon NPN Transistor |
| 2SC3719 | Power Transistor |
| 2SC3720 | Power Transistor |