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2SC3790 - Silicon NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Complement to Type 2SA1480 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-definition CRT display and video output applica

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3790 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Complement to Type 2SA1480 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-definition CRT display and video output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.2 A 7 W 1.