Download 2SC3790 Datasheet PDF
Inchange Semiconductor
2SC3790
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) - plement to Type 2SA1480 - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high-definition CRT display and video output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 7 W ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:.iscsemi.cn...