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2SC3799

Manufacturer: Inchange Semiconductor
2SC3799 datasheet preview

Datasheet Details

Part number 2SC3799
Datasheet 2SC3799_InchangeSemiconductor.pdf
File Size 210.61 KB
Manufacturer Inchange Semiconductor
Description Power Transistor
2SC3799 page 2

2SC3799 Overview

·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...

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