2SC3998
2SC3998 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Switching Speed
- High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3998 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
