2SC3998
Features
- High speed (tf=100ns typ).
- High breakdown voltage (VCBO=1500V).
- High reliability (adoption of HVP process).
- Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
Tj Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time
Symbol
Conditions
ICES VCEO(sus)
IEBO ICBO h FE1 h FE2 VCE(sat) VBE(sat) tstg tf
VCE=1500V IC=100m A, IB=0A VEB=4V, IC=0A VCB=800V, IE=0A VCE=5V, IC=1.0A VCE=5V, IC=20A IC=20A, IB=5A IC=20A, IB=5A IC=12A, IB1=2.4A, IB2=--4.8A IC=12A, IB1=2.4A, IB2=--4.8A
Ratings...
