Datasheet Details
| Part number | 2SC3997 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.25 KB |
| Description | Silicon NPN Transistor |
| Download | 2SC3997 Download (PDF) |
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| Part number | 2SC3997 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.25 KB |
| Description | Silicon NPN Transistor |
| Download | 2SC3997 Download (PDF) |
|
|
|
·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3997 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3997 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3997 | Silicon NPN Transistor | Sanyo Semicon Device |
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