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2SC4007 - Silicon NPN Power Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.
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