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2SC4134 - Silicon NPN Power Transistor

General Description

High voltage and large current capacity Fast-speed switching Small and slim package permitting 2SC4134-applied sets to be made more compact 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power suppl

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isc Silicon NPN Power Transistor 2SC4134 DESCRIPTION ·High voltage and large current capacity ·Fast-speed switching ·Small and slim package permitting 2SC4134-applied sets to be made more compact ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 2 A 10 W 0.