2SC4134 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.4A; IB= 40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.
