Datasheet Details
| Part number | 2SC4134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.68 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4134-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC4134.
| Part number | 2SC4134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.68 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4134-InchangeSemiconductor.pdf |
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·High voltage and large current capacity ·Fast-speed switching ·Small and slim package permitting 2SC4134-applied sets to be made more compact ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 2 A 10 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.4A;
IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.4A;
IB= 40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
Compare 2SC4134 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4134 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SC4134 | NPN Transistors | Kexin |
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2SC4134 | Bipolar Transistor | ON Semiconductor |
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