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2SC4135 - Silicon NPN Power Transistor

General Description

High breakdown voltage and large current capacity Fast switching speed Small and slim package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1593 APPLICATIONS Power supplies, relay drive

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA1593 APPLICATIONS ·Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 3 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4135 isc website：www.iscsemi.