Datasheet Details
| Part number | 2SC4135 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 256.48 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4135-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4135 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 256.48 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4135-InchangeSemiconductor.pdf |
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·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA1593 APPLICATIONS ·Power supplies, relay drivers,lamp drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 3 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4135 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A;
IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A;
Compare 2SC4135 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4135 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC4135 | NPN Transistors | Kexin |
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2SC4135 | Bipolar Transistor | ON Semiconductor |
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