| Part Number | 2SC4135 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN2511A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1593/2SC4135
High-Voltage Switching Applications
Applications
· Power supplies, relay derivers, lamp drivers.
Features
· Adop.
* Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Fast switching speed. * Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1593/2SC4135] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044. |
2SC4135 Datasheet and Specifications PDF
The 2SC4135 is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SC4135 Datasheet |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | onsemi |
| Overview |
Bipolar Transistor
(−)100 V, (−)2 A, Low VCE(sat), (PNP)NPN Single TP/TP−FA
2SA1593 / 2SC4135
Features
• Adoption of FBET, MBIT Process • Fast Switching Speed • Small and Slim Package Permitting 2SA1.
* Adoption of FBET, MBIT Process * Fast Switching Speed * Small and Slim Package Permitting 2SA1593 / 2SC4135 * Applied Sets to be Made More Compact * High Breakdown Voltage and Large Current Capacity Applications * Power Supplies, Relay Drivers, Lamp Drivers SPECIFICATIONS ( ): 2SA1593 ABSOLUTE MA. |
| Part Number | 2SC4135 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat. ion Voltage IC= 1.0A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V. |
| Part Number | 2SC4135 Datasheet |
|---|---|
| Description | NPN Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type High-Voltage Switching Applications 2SC4135 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switc. High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum. |