2SC4139
2SC4139 is Silicon NPN Transistor manufactured by Sanken.
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) VBE(sat) f T COB Conditions VCB=500V VEB=10V IC=25m A VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=- 1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ
(Ta=25°C) 2SC4139 Unit
µA µA
V V MHz p F
20.0min 19.9±0.3
4.0 a b
ø3.2±0.1
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 s Typical Switching Characteristics (mon Emitter)
VCC (V) 200 RL (Ω) 25 IC (A) 8 VBB1 (V) 10 VBB2 (V)
- 5 IB1 (A) 0.8 IB2 (A)
- 1.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
- V CE Characteristics (Typical)
1. 5A
V CE (sat),V BE (sat)
- I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5
- V BE Temperature Characteristics (Typical)
10 (V C E =4V)
1 .2 A
800 m A
Collector Current I C...
