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2SC4134 - Bipolar Transistor

Key Features

  • Adoption FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit 120 V 100 V 6V 1A 2A Continu.

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Datasheet Details

Part number 2SC4134
Manufacturer onsemi
File Size 298.11 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC4134 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2510B 2SC4134 Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications • Power supplies, relay drivers, lamp drivers Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit 120 V 100 V 6V 1A 2A Continued on next page. Package Dimensions unit : mm (typ) 7518-003 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 4 2.3 0.