Datasheet Details
| Part number | 2SC4330 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC4330 Download (PDF) |
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| Part number | 2SC4330 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC4330 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4330 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ;
IB= 0.3A, L= 1mH 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4330.
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