Datasheet Details
| Part number | 2SC4368 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SC4368 Datasheet
|
|
|
| Part number | 2SC4368 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SC4368 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature Tstg Storage Temperature 0.5 A 20 W 2 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4368 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4368.
| Part Number | Description |
|---|---|
| 2SC4330 | Silicon NPN Power Transistor |
| 2SC4331 | Silicon NPN Power Transistor |
| 2SC4331-Z | Silicon NPN Power Transistor |
| 2SC4332 | Silicon NPN Power Transistor |
| 2SC4332-Z | Silicon NPN Power Transistor |
| 2SC4001 | Silicon NPN Power Transistor |
| 2SC4003 | Silicon NPN Power Transistor |
| 2SC4005 | Silicon NPN Transistor |
| 2SC4007 | Silicon NPN Power Transistor |
| 2SC4027 | Silicon NPN Power Transistor |