Datasheet Details
| Part number | 2SC5047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.49 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5047 Datasheet
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| Part number | 2SC5047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.49 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5047 Datasheet
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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A;
isc Silicon NPN Power Transistor 2SC5047.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5047 | NPN TRANSISTOR | Sanyo Semicon Device |
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